A hole-dominant AlInP/GaInP double quantum well can be used to create red micro-light-emitting diode pixels with high internal quantum efficiency at low drive currents, as well as minimized size-dependent quantum efficiency shifts, allowing high-resolution active-matrix displays to be integrated on silicon complementary metal–oxide–semiconductor backplanes.

Molecular bilayer crystals of an organic semiconductor can exhibit metallic charge transport down to 8 K with an electrical conductivity of up to 245 S cm⁻¹, as well as charge carrier mobility values of more than 100 cm² V⁻¹ s⁻¹ at 20 K.

A cellular neural network that incorporates transistors and multilevel non-volatile memristor synapses can be used for efficient image and video processing.

A wearable capacitive temperature sensor that is based on exceptional-point-enhanced phase sensing can measure temperatures from 36 °C to 55.5 °C—a perturbation from 0% to 3.95%—with a maximum normalized sensitivity of 400, an estimated dynamic range of 53.52 dB and an estimated signal-to-noise ratio of 63.8 dB.

A neuromorphic system that consists of vanadium oxide memristors for the accurate encoding of information as single spikes, and hafnium oxide/tantalum oxide memristors with programming strategies to limit conductance drift, can reliably perform computations using efficient single-spike coding schemes.

By coupling volatile memristors with short-term dynamics and non-volatile memristors with long-term dynamics, spiking neural network hardware can be created that exhibits fatigue spike-timing-dependent plasticity learning.

Technology breakthroughs at the 2025 IEEE International Electron Devices Meeting, which celebrates 100 years of field-effect transistors.

Maheera Abdul Ghani, winner of the 2025 Nature Awards for Inspiring Women in Science and CEO of Cambridge Dielectrix, tells Nature Electronics about her outreach work with WinSci Pakistan and the challenges of developing dielectric technology for two-dimensional semiconductors.

Magnetic tunnel junctions based on magnesium oxide are used in high-density hard disk drives and form the basis of storage in data centres. Shinji Yuasa recounts how the first devices suitable for industrial application were developed.